Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications. This material platform possesses a high level of material quality similar to their bulk counterparts because single crystallinity is maintained. Si, Ge, and III-V based membranes have been widely studied for flexible electronic and optoelectronic devices such as thin-film transistors and photodetectors. However, the current status of research and development on free-standing single crystalline wide band-gap membranes is at a relatively early stage compared to IV and III-V based membranes. This review highlights recent advances in free-standing wide band-gap membranes, including GaN, SiC, ZnO, beta-Ga2O3, and diamond and their applications. Fabrication techniques of each membrane are presented with material characterization. Some prospects for new research opportunities and challenges are also discussed.