Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 5, Issue 40, Pages 10498-10508Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc03393a
Keywords
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Funding
- National Research Foundation of Korea (NRF) grant - Basic Research Laboratory project of the Korea government (MSIP) [2014R1A4A1008474]
- Ministry of Science, ICT and Future Planning [2015R1A2A2A01007409]
- Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) of the Ministry of Trade, Industry & Energy, Republic of Korea [20154030200870]
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For practical solution-processed oxide thin-film transistors (TFTs) with cost efficiency, high performance, and long-term environmental reliability, we suggested a novel sol-gel processed rare-metal-free oxide-based semiconductor/insulator [ZnSnO (ZTO)/Al2O3] heterostructure channel and chemically stable sol-gel multi-stacking method. In the rare-metal-free ZTO/Al2O3 heterostructure, an In- and Ga-free ZTO semiconductor with high chemical durability is employed as an effective electron transport layer. An earth-abundant Al2O3 insulator is employed as both an ambient gas molecule barrier in the ZTO back-channel region and a tunneling-induced electron transport layer beneath the source/drain electrodes. In order to minimize inevitable chemical attack coming from acidic and basic precursor solutions during the sol-gel based heterostructure construction, chemically stable sol-gel ZTO/Al2O3 heterostructure stacking was successfully demonstrated with a chemically durable Sn-modulated ZTO semiconductor and weakly corrosive pH-engineered Al2O3 precursor solution. The proposed rare-metal-free ZTO/Al2O3 heterostructure and chemically stable stacking realized sol-gel processed oxide TFT with excellent stability under humidity, temperature, bias voltage, and light exposure. We believe that our novel ZTO/Al2O3 heterostructure and chemically stable sol-gel stacking method will provide an interesting route for the fabrication of practical solution-based oxide TFTs with cost efficiency, high performance, and long-term reliability, instead of conventional rare-metal based oxide materials and channel structures with high environmental instability.
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