Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 5, Issue 1, Pages 59-64Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc04907a
Keywords
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Funding
- People Programme (Marie Curie Actions) of the European Union's Framework Programme Horizon: Flexible Complementary Hybrid Integrated Circuits'' (FlexCHIC) [658563]
- EPSRC [EP/K004913/1, EP/J021199/1]
- Royal Society [UF100105]
- EPSRC [EP/K004913/1, EP/J021199/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/J021199/1, EP/K004913/1] Funding Source: researchfish
- Marie Curie Actions (MSCA) [658563] Funding Source: Marie Curie Actions (MSCA)
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We study the influence of post-deposition annealing temperature on themorphology, chemical state and electrical properties of solutionprocessed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm(2) V-1 s(-1).
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