4.6 Article

Birhodanines and their sulfur analogues for air-stable n-channel organic transistors

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 5, Issue 35, Pages 9121-9127

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc02886e

Keywords

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Funding

  1. ACT-C from JST, Japan [JPMJCR12ZB]
  2. Ministry of Education, Culture, Sports, Science, and Technology of Japan [16K13974]
  3. Agence Nationale de la Recherche, France (ANR) [12-BS07-0032]
  4. Grants-in-Aid for Scientific Research [16K13974] Funding Source: KAKEN

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A series of thin-film n-channel organic field-effect transistors based on various birhodanines, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,2'-dione-4,4'-dithiones (OS-R) and their sulfur analogues, 3,3'-dialkyl-5,5'-bithiazolidinylidene-2,4,2',4'-tetrathiones (SS-R) are studied. The SS-R compounds have tilted stacking crystal structures, whereas the OS-R compounds show basically herringbone structures. The alkyl chain R length and the intermolecular S-S interactions influence the molecular packing to realize excellent long-term air stability in the thin-film transistors.

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