Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 5, Issue 12, Pages 3183-3187Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc05502h
Keywords
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Funding
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning (MSIP) of Korea [2015R1A2A2A11001426, 2016K1A4A3914691, 2016K1A3A1A32913360]
- NRF - Korean government (MSIP) [2009-0081565]
- National Research Foundation of Korea [2016K1A3A1A32913360, 2015R1A2A2A11001426] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Gate-tunable Schottky junction solar cells (SJSCs) based on graphene and graphene mesh electrodes on n-type Si are fabricated and the effect of the external gate voltage (V-g) on the photovoltaic characteristics is investigated. The power conversion efficiencies (PCEs) of both devices continuously increase with increasing absolute values of V-g. Importantly, despite the slightly lower PCE values at V-g = 0 V, the graphene mesh on Si SJSC shows more rapid enhancement of PCE values, from 5.7% to 8.1%, with V-g varied from 0 V to -1 V. The finite element simulation highlights the benefits of the graphene mesh electrodes from the non-uniform and dynamic modulation of potential distributions driven correlatively by a work function change in the graphene regions and electric-field penetration through the hole regions.
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