4.6 Article

Highly flexible inverted-quantum-dot light-emitting diodes on elastic polyurethane substrates

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 5, Issue 7, Pages 1596-1600

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc04310k

Keywords

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Funding

  1. KIST Institution Program [2E27150, 2E27160]
  2. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2015R1C1A1A01051841]
  3. NRF - Ministry of Science, ICT & Future Planning [NRF-2016M1A2A2940912]
  4. National Research Foundation of Korea [22A20152213086, 2016M1A2A2940912, 2015R1C1A1A01051841] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Fabrication of highly flexible, inverted, indium tin oxide (ITO)-free top-emitting quantum-dot light-emitting diodes (QDLEDs) on elastic polyurethane (PU) substrates is reported here. To cope with the irregular surfaces of the PU substrate, polyvinyl alcohol (PVA) is used as a buffer layer. By adopting the PVA buffer layer, we demonstrate red-color and green-color top-emitting QDLEDs that show turn-on voltages from 4.0 V to 4.5 V, and maximum luminance values of 1200 cd m(-2) (red) and 4800 cd m(-2) (green). In addition, when the QDLEDs are stuck on the curved surfaces (vials and a tumbler), the devices still exhibit a clear light emission. These highly flexible QDLEDs can pave the way for further development of next-generation wearable or attachable displays, or solid-state lighting.

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