4.6 Article

SnO as a potential oxide thermoelectric candidate

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 5, Issue 34, Pages 8854-8861

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc01623a

Keywords

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Funding

  1. National Science Foundation DMR [1334713, 1334351, 1333335]
  2. Department of Energy's Office of Energy Efficiency and Renewable Energy
  3. MRSEC of the National Science Foundation at the Materials Research Center of Northwestern University [DMR-1121262]
  4. Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF NNCI-1542205]
  5. Direct For Mathematical & Physical Scien
  6. Division Of Materials Research [1334713] Funding Source: National Science Foundation
  7. Division Of Materials Research
  8. Direct For Mathematical & Physical Scien [1333335, 1334351] Funding Source: National Science Foundation

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In the search for new thermoelectric materials, high-throughput calculations using a combination of semiempirical models and first principles density functional theory present a path to screen large numbers of compounds for the most promising candidates. Using this method, we have assessed 735 oxide materials for their thermoelectric performance potential, and identified SnO as an n-type candidate. Computations indicate a dispersive and doubly degenerate conduction band edge as well as lone pair electrons. Lone pair s-orbital semiconductors have demonstrated unusual properties in their electronic structure and thermal properties, making SnO a material of interest for applications including oxide electronics and thermoelectrics. We report thermal conductivity as low as 0.75 W m (1) K (1) at 525 K for bulk, polycrystalline SnO. The Hall effect and Seebeck coefficient were measured and a high p-type mobility of 30 cm(2) V-1 s(-1) at room temperature for a polycrystalline sample is reported. The stability is computationally assessed, offering insight into the challenges associated with achieving n-type behavior.

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