Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 5, Issue 19, Pages 4614-4620Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7tc00990a
Keywords
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Funding
- Center of Nanoscience and Nanotechnology Research Unit
- Science Achievement Scholarship of Thailand (SAST)
- Faculty of Science, Mahidol University
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A CuO semiconductor was successfully prepared by fused deposition modeling (FDM) and sintering technique. A 1.75 mm high-loading Cu composite was extruded and printed into a desired size and shape. The sample was sintered and calcined to transform Cu powder to CuO semiconductor. The 3-dimensional (3D) printed CuO had a scaffold structure with a half density of bulk CuO. It had a mechanical characteristic like a scaffold ceramic although prepared by FDM machine. van der Pauw measurement and UV-visible absorption spectroscopy were used to determine the electrical and optical properties of the 3D printed CuO respectively. The 3D printed CuO was used as an example of a 3D semiconductor which has a response to light, pressure, and temperature. This technique has a potential to be applied in any FDM machine which might allow anyone to print semiconductor or other related materials.
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