Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 5, Issue 12, Pages 5701-5708Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ta10212c
Keywords
-
Funding
- National Natural Science Foundation of China [61475106]
- Natural Science Foundation of Jiangsu Province [BK20151264]
- National Key Research Projects [2016YFA0202402]
- Collaborative Innovation Center of Suzhou Nano Science & Technology (NANO-CIC)
- Priority Academic Program Development of Jiangsu Higher Education Institutions
Ask authors/readers for more resources
Rational hole transport layer (HTL) material design is regarded as one of the most important approaches to improve the efficiency and stability of perovskite solar cells (PSCs). Herein, we investigate the effect of a widely spread p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) on the optical and electrical properties of conventional poly(3,4-ethylenedioxythiophene): poly-(styrene sulfonate) (PEDOT:PSS) HTLs, as well as the photovoltaic performance of the corresponding perovskite solar cells. Doping F4-TCNQ at a low concentration can efficiently adjust the electrical properties of the PEDOT: PSS film and lower the highest occupied molecular orbital (HOMO) level. As a result, the enhanced electrical conductivity and energetically favorable energy level alignment of the doped film allow efficient carrier transport from the perovskite absorber layer to the HTL. Finally, the PSCs with the F4-TCNQ doped HTL exhibited simultaneously increased short-circuit current (J(sc)), open circuit voltage (V-oc) and fill factor (FF). The highest power conversion efficiency (PCE) was notably improved from 13.30% (undoped) to 17.22% (0.30 wt% of F4-TCNQ doping), suggesting that the F4-TCNQ doped PEDOT: PSS film is an efficient HTL to achieve high performance perovskite solar cells.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available