4.6 Article

Enhancement of the thermoelectric performance of bulk SnTe alloys via the synergistic effect of band structure modification and chemical bond softening

Journal

JOURNAL OF MATERIALS CHEMISTRY A
Volume 5, Issue 27, Pages 14165-14173

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ta03359a

Keywords

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Funding

  1. National Basic Research Program of China [2013CB632506]
  2. Natural Science Fund of China [51501105, 51672159, 51611540342]
  3. Young Scholars Program of Shandong University [2015WLJH21]
  4. China Postdoctoral Science Foundation [2015M580588, 2016T90631]
  5. Postdoctoral Innovation Foundation of Shandong Province [201603027]
  6. Fundamental Research Funds of Shandong University [2015TB019]
  7. Foundation of the State Key Laboratory of Metastable Materials Science and Technology [201703]
  8. National Research Foundation of Korea [NRF-2016K2A9A2A06005099]

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SnTe alloys, which have the same crystal structure as PbTe, have attracted increasing attention. Here, we demonstrate that the synergistic effect of band structure modification and chemical bond softening can be realized simultaneously in In & Mn doped SnTe bulk alloys. The Seebeck coefficient and power factor are synergistically improved by co-doping of In and Mn. In doping is known to introduce a resonance level. Mn doping reduces the separation of light- and heavy-valence bands. The combination of these effects significantly enhances the Seebeck coefficient at room temperature owing to around a factor of five times increase in the band effective mass. The reduction of thermal conductivity is from the decrease of both the electronic and phononic parts. The electronic thermal conductivity is decreased by the increase in defect scattering, as can be confirmed by the carrier mobility. The force constant of the bonds around the Te site is decreased due to the co-doping of In & Mn, which indicates that the chemical bonds are softened, which leads to low sound velocity and lower lattice thermal conductivity. As a result, the peak thermoelectric figure of merit, zT = 1.03 has been achieved for Sn0.89In0.01Mn0.1Te at 923 K. This strategy of using the synergistic effect of band structure modification and chemical bond softening could be applicable to other thermoelectric materials.

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