Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 5, Issue 31, Pages 16179-16188Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ta09802a
Keywords
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Funding
- National Basic Research Program of China [2013CB632405]
- National Natural Science Foundation of China [21425309, 51563020]
- Specialized Research Fund for the Doctoral Program of Higher Education [20133514110003]
- 111 project
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Large pore three-dimensional cage-type mesoporous carbon nitride semiconductors were successfully synthesized by employing SBA-16 templates which are prepared by hydrothermal methods at higher temperatures. These samples were characterized by using various techniques, and their photocatalytic H-2 production properties were investigated under visible light (lambda > 420 nm) irradiation. The results have shown that the textural parameters of the carbon nitride semiconductors can be easily tuned by simple adjustment of the synthesis temperature of the template SBA-16 silica, and carbon nitride semiconductors can be truly reversely replicated from the cubic structure of the template silica synthesized at a temperature of 180 and 200 degrees C. The large pore cage-type mesoporous carbon nitride semiconductor cast from mesoporous silica at the hydrothermal temperature of 200 degrees C exhibits a remarkably enhanced photocatalytic activity towards hydrogen evolution, as compared to either disordered mesoporous g-CN or bulk g-CN prepared by our previous synthetic approaches.
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