Journal
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
Volume -, Issue -, Pages 831-836Publisher
IEEE
Keywords
aluminum; metamorphic; metalorganic chemical vapor deposition; plasma enhancement
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Funding
- U. S. Dept. of Energy [DE-EE0007363]
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Aluminum could be used as a structural buffer and sacrificial layer that is lattice-matched on the (001) surface to GaInAs having a 45 degrees in-plane rotation. Conventional MOCVD from trimethylaluminum results in nanocrystalline aluminum carbide. By using hydrogen-plasma assistance in the reactor inlet, we avoid carbide formation, allowing deposition of elemental aluminum. The microstructures of these films resulting from initial applications of this method are discussed.
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