Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 5, Issue 6, Pages 2920-2928Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ta08426e
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Funding
- National Science Foundation [CHE-1230246, DMR-1534686]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1534691] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1534686] Funding Source: National Science Foundation
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Efforts toward developing efficient and stable inorganic hole transport materials for inverted perovskite CH3NH3PbI3 solar cells are underway. Herein, a wide bandgap p-type quaternary chalcogenide Cu2BaSnS4 semiconductor is demonstrated as a promising hole transport material in inverted perovskite CH3NH3PbI3 thin-film solar cells owing to its satisfactory chemical stability, high carrier mobility (similar to 10 cm(2) V-1 s(-1)), and suitable band alignment with CH3NH3PbI3. Our inverted solar cell based on a 100 nm thick Cu2BaSnS4 hole transport layer achieves a best PCE of similar to 10% with a low degree of current-voltage scan hysteresis.
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