Journal
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume 7, Issue 5, Pages 614-616Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2017.2722360
Keywords
Detectors; field effect transistor (FET); graphene; submillimeter wave measurements; submillimeter wave transistors; terahertz (THz)
Funding
- Chalmers Area of Advance
- EU Graphene Flagship
- Knut and Alice Wallenberg Foundation
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This letter presents a graphene field effect transistor (GFET) detector at 400 GHz, with a maximum measured optical responsivity of 74 V/W, and a minimum noise-equivalent power of 130 pW/Hz1/2. This letter shows how the detector performance degrades as a function of the residual carrier concentration in the graphene channel, which is an important material parameter that depends on the quality of the graphene sheet and contaminants introduced during the fabrication process. In this work, the exposure of the graphene channel to liquid processes is minimized resulting in a low residual carrier concentration. This is in part, an important contributing factor to achieve the record high GFET detector performance. Thus, our results show the importance to use graphene with high quality and the importance to minimize contamination during the fabrication process.
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