Journal
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume 7, Issue 6, Pages 800-807Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2017.2756059
Keywords
Millimeter-wave/ terahertz (THz) wave generation; unitraveling carrier photodiodes (UTC-PDs)
Funding
- French Defense Agency DGA (Direction generale de l'armement)
- ITN MITEPHO Marie-Curie program
- French Agence Nationale de la Recherche (ANR) COM'TONIQ Grant [ANR-13-INFR-0011-01]
- Lille University, Institute of Electronics, Microelectronics and Nanotechnology (RF/MEMS Characterization Center, Nanofab platform)
- CNRS
- RENATECH (French nano-fabrication network)
- French Programmes d'investissement d'avenir Equipex [FLUX 0017]
- ExCELSiOR project
- Hauts de France Regional Council
- FEDER through the CPER Photonics for Society
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We present a resonant-cavity-enhanced broadband unitraveling carrier photodiode optimized for terahertz (THz) generation. It uses a novel semitransparent top-contact utilizing subwavelength apertures for enhanced optical transmission. The contact allows front-side illumination of the photodiode using 1.55-mu m-wavelength light, while still retaining a small contact resistance suitable for photomixing at THz frequencies. The responsivity of the device is improved by introducing a metallic mirror below the diode mesa through wafer bonding, producing an optical resonant cavity. A record continuous-wave output power of 750 mu W is measured for a single photodiode at 300 GHz. Record values of efficiency are also demonstrated.
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