Journal
CURRENT APPLIED PHYSICS
Volume 17, Issue 1, Pages 85-91Publisher
ELSEVIER
DOI: 10.1016/j.cap.2016.11.004
Keywords
Field emitter arrays; ZnO nanowires; Gated structure; Microfabrication
Funding
- National Key Research and Development Program of China [2016YFA0202001]
- National Key Basic Research Program of China [2010CB327703, 2007CB935501]
- NNSFC [60925001]
- Fundamental Research Funds for the Central Universities
- Science and Technology Department, Guangdong Province
- Economic and Information Industry Commission of Guangdong Province
- Guangzhou Science Technology and Innovation Commission
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Addressable field emitter arrays (FEAs) have important applications in vacuum electronic devices. However, it is important to integrate nanowire emitters into a gated structure without influencing the device structure and maintain the excellent field emission properties of nanowire emitters in the FEAs after the fabrication process. In this study, gate-structure ZnO nanowire FEAs were fabricated by a microfabrication process. The structure combines a planar gate and an under-gate, which is compatible with the preparation of ZnO nanowire emitters. The effect of electrode materials on the field emission properties of ZnO nanowires was studied using a diode structure, and it was found that ZnO nanowire pads on indium-tin-oxide (ITO) electrode showed better field emission performance compared with chromium (Cr) electrode. In addition, effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated by integrating the ZnO nanowire FEAs in a vacuum-encapsulated field emission display. The reported technique could be a promising route to achieve large area addressable FEAs. (C) 2016 Elsevier B. V. All rights reserved.
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