Journal
APPLIED SURFACE SCIENCE
Volume 395, Issue -, Pages 232-236Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2016.06.038
Keywords
MoS2; Pulsed laser deposition; Stoichiometric target; GaN/AlGaN/GaN (0001); Si (100); Raman spectroscopy; TEM analyses; AES analyses
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Funding
- Slovak Research and Development Agency [APVV-0494-11, APVV LPP-0078-07]
- Slovak Grant Agency for Science [VEGA 2/0120/14, VEGA 2/0173/13, VEGA 2/0178/15]
- project CENTE I, R&D Operational Program - ERDF, ITMS code [26240120011]
- Ministry of Education, Science, Research and Sport of the Slovak Republic [ITMS 26240220084]
- European Regional Development Fund
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Very thin MoS2 films were prepared on hexagonal GaN/AlGaNIGaN (0001) and Si (100) substrates from a stoichiometric target by a pulsed laser deposition. Combined results from Raman and X-ray reflectivity measurements have shown that the thinnest samples are 2-2.5 nm thick. The thickness increases with the number of laser pulses applied albeit no simple direct proportion between the two quantities has been observed. Concerning the stoichiometry, the distribution of Mo and S elements within as-deposited films is rather complex. The stoichiometric MoS2 is making-up only a part of the film. In spite of this, selected area electron diffraction studies have clearly confirmed that the films deposited on Si (100) are nanocrystalline and oriented perpendicularly to the substrate surface while an epitaxial growth of MoS2 films was observed on GaN/AlGaNIGaN (0001) substrates. (C) 2016 Elsevier B.V. All rights reserved.
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