Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 7, Issue 1, Pages 383-398Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2016.2614119
Keywords
Boron-oxygen (BO) defects; Czochralski (Cz); Czochralski silicon degradation; light-induced degradation (LID); review; silicon
Funding
- German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety [0325450B]
- German Federal Ministry for Economic Affairs and Energy and industry partners [0325763A]
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This paper gives an overview on the current understanding of a technologically relevant defect group in crystalline silicon related to the presence of boron and oxygen. It is commonly addressed as boron-oxygen defects and has been found to affect silicon devices, whose performance depends on minority charge carrier diffusion lengths-such as solar cells. The defects are a common limitation in Czochralski-grown p-type silicon, and their recombination activity develops under charge carrier injection and is, thus, commonly referred to as light-induced degradation. A multitude of studies investigating the effect have been published and introduced various trends and interpretations. This review intends to summarize established trends and provide a consistent nomenclature for the defect transitions in order to simplify discussion.
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