Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4974042
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- National Science Foundation (NSF) [ECCS-1509653]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1509653] Funding Source: National Science Foundation
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We present an approach to design Ga2O3-based materials with tunable optical properties. In the Ti-doped Ga2O3 model system, where the Ti content (x) was varied up to similar to 5 at. %, Ti induced significant effects on the structural and optical properties. Single-phase beta-Ga2O3 formation occurs for a lower Ti content (<= 1.5 at. %); however, composite-oxide (Ga2O3-TiO2) formation occurs for a higher Ti content. While band gap reduction (E-g similar to 0.9 eV) coupled with refractive index (n) enhancement occurs, indicating the electronic-structure modification, with Ti incorporation, the changes are dominant only in the Ga2O3-TiO2-composite. A direct, functional Ti(x)-Eg-n relationship was found, which suggests that tailoring the optical quality and performance of Ga-Ti-O is possible by tuning the Ti content and structure. Published by AIP Publishing.
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