Journal
CORROSION SCIENCE
Volume 116, Issue -, Pages 34-43Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.corsci.2016.12.010
Keywords
Copper; EIS; Ab initio computation; Electrochemical calculation; Passive film
Funding
- National Natural Science Foundation of China [51671029]
- Fundamental Research Funds for the Central Universities [FRF-TP-14-011C1]
- National Basic Research Program of China (973 Program) [2014CB643300]
- SSM (Stral Sakerhets Myndigheten) of Sweden
- University of California at Berkeley
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Electrochemical measurements based on the point defect model and ab initio calculations were employed to investigate the properties of passive films formed on copper in anaerobic sulphide-containing solutions at different temperatures. P-type semiconductor characteristics were observed at potentials more positive than -0.75 V-SCE, which is consistent with copper vacancies being the dominant defect, but n-type behaviour was observed at lower potentials. The density of copper vacancies (approximately 10(22) cm(-3)) increases with temperature and formation potential, and the diffusion coefficient of copper vacancies lies within the range of 10(-13) to 10(-14) cm(2)/s based on ab initio computations and electrochemical measurements. (C) 2016 Elsevier Ltd. All rights reserved.
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