Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4973928
Keywords
-
Categories
Ask authors/readers for more resources
In this study, we control the oxidant dose to promote ferroelectricity in dopant-free ALD hafnium oxide films. By lowering the oxidant dose during growth, we show that we can achieve near total suppression of the monoclinic phase in sub-10 nm hafnium oxide films with no major impurity doping. Using metal-insulator-metal structures, we demonstrate that lowering the oxidant dose can give rise to a six-fold improvement in remanent polarization. Using this technique, we observe a remanent polarization of 13.5 mu C/cm(2) in a 6.9 nm-thick hafnium oxide film and show that some ferroelectricity can persist in pure hafnium oxide films as thick as 13.9 nm. Using a trap-assisted tunneling model, we show the relationship between the oxidant dose and oxygen vacancy concentration in the films, suggesting a possible mechanism for the suppression of the monoclinic phase. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available