Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4976709
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Funding
- National Natural Science Foundation of China [61377027]
- National Key Research and Development Program of China [2016YFB0401305]
- Education Department Foundation of Fujian Province [JA15076]
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In this work, we present a simple and facile one step synthesis strategy to prepare CH3NH3PbBr3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive switching phenomenon was observed in this perovskite quantum dots and polymer composite based memory device with the ON/OFF current ratio larger than 10 3 as well as good reproducibility and reliability. Flexible memory was also demonstrated, and a possible resistance switching mechanism was discussed. Our work paves a way for the application of organolead halide perovskite quantum dots in flexible and transparent nonvolatile memories. Published by AIP Publishing.
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