Journal
NPJ QUANTUM MATERIALS
Volume 2, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41535-017-0015-x
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Funding
- U.S. Department of Energy, Office of Science [DESC0004764]
- NSF [DMR-1006136]
- CCDM
- EFRC - U.S. DOE-BES [DE-SC0012575]
- DOE-BES, Materials Science and Engineering [DESC0012704]
- U.S. Army Research Office [W911NF-15-1-0181]
- Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-ACO2-05CH11231]
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Advancementsn nanoscale engineering of oxide interfaces and he o ructures have led to discoveries of er en phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laserdeposition, we show here,with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase La NinO3n+1 (n=4), and LaAl1+yO3((1+O5y))/SrTiO3 interfaces,,that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced' conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
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