Journal
APPLIED SURFACE SCIENCE
Volume 396, Issue -, Pages 484-491Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2016.10.180
Keywords
BCN thin films; Dual target sputtering; Optical properties; Wide bandgap; X-ray photoelectron spectroscopy (XPS)
Ask authors/readers for more resources
Boron carbon nitride (BCN) thin films are investigated for their optical properties. BCN, is the unanimous choice for inter-dielectric layer (IDL) in very large scale integration (VLSI) because of its low-k dielectric constant. Optical properties can be tailored as a function of elemental composition, which makes BCN a prospective material in UV-filters and mirrors. Films are deposited by reactive co-sputtering of boroncarbide (B4C) and boronnitride (BN) with varying N-2/Ar gas flow ratio by DC and RF sputtering respectively. XPS studies are performed to deduce the bonding and chemical properties of the BCN thinfilms. Optical band gap (Eg) studies are performed as a result of varying target powers, gas ratios and deposition temperatures. Eg is found to increase with N-2/Ar flow ratios and deposition temperatures. BCN deposited at 20 W DC exhibited higher band gap range and the highest achieved is 3.7 eV at N-2/Ar = 0.75. Lowest value achieved is 1.9 eV at N-2/Ar = 0.25 for as-deposited films. (C) 2016 Elsevier B. V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available