Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 6, Issue 7, Pages P379-P382Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0121707jss
Keywords
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Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2014R1A2A1A11050637]
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry Energy (MOTIE) [10067746]
- Korea Semiconductor Research Consortium (KSRC)
- National Research Foundation of Korea [22A20152213124, 2014R1A2A1A11050637] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Thin film transistors (TFTs) with anatase-TiO2 channel material deposited on an SiO2/Si substrate by atomic layer deposition are fabricated to investigate the effect of the source/drain (S/D) metal work function on the electrical characteristics of the TFTs. S/D materials such as aluminum, silver, and gold are selected for this study. From the measured current-voltage characteristic curves in the dark and at room temperature, it is demonstrated that the anatase TiO2-based TFT with Ag S/D material shows the highest on/off-current ratio (similar to 10(5)), field effect mobility in the saturation regime (mu(sat) = 5.17 cm(2)V(-1)s(-1)), and saturation current (I-DS,I-sat similar to 0.47 mA). (C) 2017 The Electrochemical Society. All rights reserved.
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