Communication-Electrical Characterization of β-Ga2O3 Single Crystal Substrates

We have electrically investigated deep-level defects in unintentionally-doped beta-Ga2O3 single crystal substrates fabricated by an edgedefined film-fed growth method, employing capacitance-voltage (C-V) and steady-state photo-capacitance spectroscopy (SSPC) techniques. From C-V measurements, n-type residual carriers with their concentration of similar to 8.7 x 1016 cm(-3) were almost uniformly distributed over the measured depth region of 188 - 336 nm from the beta-Ga2O3 surface. SSPC measurements revealed four dominant deep-level defects located at similar to 0.8, similar to 2.04, similar to 2.71, and similar to 3.87 eV below the conduction band, in addition to near-band-edge emissions at 4.49 eV. These deep-level defects tended to be more densely present with shallowing the probing depth range. (c) 2017 The Electrochemical Society. All rights reserved.