Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 35, Issue 2, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4974925
Keywords
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Funding
- MOTIE (Ministry of Trade, Industry and Energy Project) [10051403, 10052020]
- KDRC (Korea Display Research Corporation)
- Industry Technology R&D program of MOTIE/KEIT [10051080]
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The effect of nitrogen incorporation in Ge-Ga-In-O (GGIO) semiconductors was investigated with respect to persistent photoconduction (PPC) and the associated thin-film transistor stability under negative bias illumination stress (NBIS). As the nitrogen partial pressure [pN(2) - N-2/(Ar + O-2 + N-2)] was increased from 0% to 40% during the reactive sputter growth of GGIO layers, the PPC phenomenon became less pronounced and higher device stability under NBIS was observed. X-ray photoelectron spectroscopy analyses suggest that the concentration of light-sensitive oxygen vacant sites in the GGIO semiconductors decreases as a result of nitrogen incorporation, hence the reduced PPC and higher device stability under NBIS. (C) 2017 American Vacuum Society.
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