4.8 Article

1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light Emitting Diodes with High Brightness

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 9, Pages 8187-8193

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b16238

Keywords

1,2-ethanedithiol; ligand exchange; quantum dot; light-emitting diode; AgIn5S8/ZnS

Funding

  1. Natural Science Foundation of China [51272084, 61225018, 61475062, 61675086]
  2. Jilin Province Key Fund [20140204079GX]
  3. BORSF RCS/SURE/Endowed Professor programs
  4. Institutional Development Award [P20GM103424]

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The surface organic ligands of the quantum dots (QDs) play important roles in the performance of QD electronic devices. Here, we fabricated low toxic AgIn5S8/ZnS QDs light-emitting diodes (QD-LEDs) and greatly enhanced the device efficiency through surface ligand exchange treatments. The oleic acid-capped QDs were replaced with a shorter ligand 1,2-ethanedithiol, which was proved by the Fourier transform infrared spectrum measurement. The treated QD films became more compact with higher film mobility and shorter film photoluminescence lifetime. The more conductive QD films fabricated LEDs showed an external quantum efficiency over 1.52%.

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