Journal
APPLIED PHYSICS EXPRESS
Volume 10, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.10.021001
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Funding
- U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0010689]
- Marie Sklodowska-Curie Action of the European Union (Project Nitride-SRH) [657054]
- KACST-KAUST-UCSB Solid State Lighting Program
- National Science Foundation IMI Program [DMR08-43934]
- DOE Office of Science [DE-AC02-05CH11231]
- Marie Curie Actions (MSCA) [657054] Funding Source: Marie Curie Actions (MSCA)
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Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level similar to 1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 10(17)cm(-3), the Shockley-Read-Hall recombination coefficient, A, of InGaN exceeds 10(6) s(-1) for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes. (C) 2017 The Japan Society of Applied Physics
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