Journal
ADVANCED MATERIALS
Volume 29, Issue 11, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201605699
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Funding
- ONR
- ARO YIP award
- AFOSR YIP award
- STARNET LEAST center
- NSF E3S center
- IRICE program at Berkeley
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Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.
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