A Facile Steam Reforming Strategy to Delaminate Layered Carbon Nitride Semiconductors for Photoredox Catalysis

The delamination of layered crystals that produces single or few-layered nanosheets while enabling exotic physical and chemical properties, particularly for semiconductor functions in optoelectronic applications, remains a challenge. Here, we report a facile and green approach to prepare few-layered polymeric carbon nitride (PCN) semiconductors by a one-step carbon/nitrogen steam reforming reaction. Bulky PCN, obtained from typical precursors including urea, melamine, dicyandiamide, and thiourea, are exfoliated into few-layered nanosheets, while engineering its surface carbon vacancies. The unique sheet structures with strengthened surface properties endow PCNs with more active sites, and an increased charge separation efficiency with a prolonged charge lifetime, drastically promoting their photoredox performance. After an assay of a H-2 evolution reaction, an apparent quantum yield of 11.3% at 405 nm was recorded for the PCN nanosheets, which is much higher than those of PCN nanosheets. This delamination method is expandable to other carbon-based 2D materials for advanced applications.