Journal
ADVANCED MATERIALS
Volume 29, Issue 12, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201605511
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Funding
- Dow Chemical Company through the Dow Materials Institute at UCSB
- National Science Foundation [DMR 1411240]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1411240] Funding Source: National Science Foundation
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The high temperature performance of organic field-effect transistors based on a molecular organic semiconductor with intermediate dimensions, namely X2, is evaluated. Hole mobility is stable, even at 200-250 degrees C. Changes in device characteristics at high temperature are reversible across multiple cycles of high temperature operation. Measurements at high temperature exhibit larger hysteresis, while at low temperature one observes the emergence of ambipolar transport.
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