4.6 Article

High-Efficiency All-Dielectric Metalenses for Mid-Infrared Imaging

Journal

ADVANCED OPTICAL MATERIALS
Volume 5, Issue 23, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201700585

Keywords

hydrogenated amorphous silicon (alpha-Si:H); metasurfaces; mid-infrared imaging

Funding

  1. China Scholarship Council [201506310074]
  2. Australian Research Council (ARC) Future Fellowship [FT110100853]
  3. ARC Centre of Excellence for Ultrahigh Bandwidth Devices for Optical Systems [CE110001018]

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Metasurfaces-based flat optics, which can make use of existing foundry planar technology for high-throughput production, allows the arbitrary control of the wavefront and polarization of light within subwavelength thick structures. So far, however, flat optics for the mid-infrared (MIR) has received far less attention than devices operating at visible or near-infrared wavelengths. Here, polarization-insensitive, highly efficient, all-dielectric metalenses operating in the MIR around 4 mu m are demonstrated. The metalens is designed using rigorous coupled-wave analysis and is based on hydrogenated amorphous silicon (alpha-Si:H) nanopillars supported by an MgF2 substrate. The metalenses produce close to a diffraction-limited focal spot and can resolve structures on the wavelength scale where the focusing efficiency reaches 78% at a magnification of 120x. The imaging qualities are comparable with commercial bulk-molded chalcogenide aspheric lenses. These results provide novel solutions for existing MIR technology and nurture new functionalities with the population of miniaturized and planarized optoelectrical devices.

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