4.6 Article

Electronic transport across metal-graphene edge contact

Journal

2D MATERIALS
Volume 4, Issue 2, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa5c9d

Keywords

metal-graphene; edge contact; electronic transport

Funding

  1. Creative Materials Discovery Program on Creative Multilevel Research Center through the National Research Foundation (NRF) of Korea - Ministry of Science, ICT AMP
  2. Future Planning [2015M3D1A1068062]
  3. National Natural Science Foundation of China [11304161]
  4. Start-up Research Grants from Nankai University
  5. National Research Foundation of Korea [2015M3D1A1068062] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The electronic transport across metal-graphene edge-contact structures is studied by first principles methods. Unusual double-dip transmission as a function of Fermi level is found for a Pd electrode over varying grapheme lengths. Interface metal-carbon hybridization is shown to introduce random distribution of pi-orbital local density of states at different carbon sites leading to transmission suppression. For a Ti electrode, two dips are merged into one with a similar to 0.2 eV transport gap opening. Our work sheds light on the origin of intrinsic contact resistance at metal-graphene edge contact.

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