Journal
INDIAN JOURNAL OF PHYSICS
Volume 91, Issue 4, Pages 439-443Publisher
INDIAN ASSOC CULTIVATION SCIENCE
DOI: 10.1007/s12648-016-0942-6
Keywords
1 mu m Laser; Black phosphorus; Passively Q switching; Solid state laser
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Funding
- National Natural Science Foundation of China [61178060]
- Natural Science Foundation for Distinguished Young Scholar of Shandong Province [2012JQ18]
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In this paper, the use of black phosphorus (BP) as a saturable absorber in a Q-switched Nd-ion doped solid state laser is presented. Few layers of BP in isopropyl alcohol are obtained by liquid phase exfoliation. The BP nanosheets with thicknesses in the range of 15-20 nm are deposited onto a K9 glass substrate. By inserting the BP nanosheets into a diode pumped Nd-ion doped solid state laser, stable Q-switched lasing at 0.9, 1.06, 1.3 mu m is obtained. Using this approach, we have achieved a short pulse duration down to 219 ns, a high pulse energy of up to 6.5 mu J, and the corresponding peak power of 30 W. Our results show that the BP saturable absorber functions well in a Nd-ion doped solid state laser for pulsed laser generation.
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