Journal
ACS NANO
Volume 11, Issue 4, Pages 4337-4345Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b01547
Keywords
perpendicular magnetic anisotropy; spin reorientation transition; multiferroic heterostructure; magnetoelectric coupling; ferromagnetic resonance; spin-orbit coupling
Categories
Funding
- Natural Science Foundation of China [51472199, 11534015, 51602244]
- Natural Science Foundation of Shaanxi Province [2015JM5196]
- National 111 Project of China [B14040]
- 973 Program [2015CB057402]
- Fundamental Research Funds for the Central Universities
- International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies
- China Post-doctoral Science Foundation [2016M590939]
- Natural Sciences and Engineering Research Council of Canada (NSERC) [203773]
- China Recruitment Program of Global Youth Experts
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One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)(3)/(011) Pb(Mg1/3Nb2/3)O-3-PbTiO3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (Delta H-eff) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a Delta H-eff of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a Delta H-eff of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.
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