Journal
ACS NANO
Volume 11, Issue 4, Pages 4097-4104Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b00783
Keywords
nonvolatile memory; conducting bridge random access memory; resistive switching memory; in situ transmission electron microscopy; conducting filament
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Funding
- Research Grant Council of Hong Kong [PolyU 252001/14E]
- Hong Kong Polytechnic University [1-ZE25, 1-ZVDH]
- National Natural Science Foundation of China [11274257]
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Conducting bridge random access memory (CBRAM) is one of the most promising candidates for future nonvolatile memories. It is important to understand the scalability and retention of CBRAM cells to realize better memory performance. Here, we directly observe the switching dynamics of Cu tip/SiO2/W cells with various active electrode sizes using in situ transmission electron microscopy. Conducting filaments (CFs) grow from the active electrode (Cu tip) to inert electrode (W) during the SET operations. The size of the Cu tip affects the electric-field distribution, the amount of the cation injection into electrolyte, and the dimension of the CF. This study provides helpful understanding on the relationship between power consumption and retention of CBRAM cells. We also construct a theoretical model to explain the electrode-size-dependent CF growth in SET operations, showing good agreement with our experimental results.
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