Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn-Al-O Interfaces Fabricated by Atomic Layer Deposition

Highly conductive and optical transparent Al doped ZnO (AZO) thin 'film composed of ZnO with a Zn-Al-O interface was fabricated by therinal atomic layer deposition (ALD) method. The asTrepared AZO thin film exhibits excellent electrical and optical properties with high stability and compatibility with temperature -sensitive flexible photoelectronic devices; filin resistivity is as low as 5.7 X 10(-4) Omega.cm, the carrier concentration is high up to 2.2 X 10(21) cm(-3). optical transparency is greater. than 80% in a visible range, and = the growth temperature is below 150 degrees C on the PEN substrate. Compared with the conventional AZO film containing by a ZnO-Al2O3 interface, we propose that the underlying mechanism of the enhanced electrical conductivity for the current AZO thin film is attributed to the oxygen vacancies deficiency derived from the free competitive growth mode of Zn-O and Al-O bonds in the Zn-Al-O interface. The flexible transparent transistor based on this AZO electrode exhibits a favorable thre$hold voltage and I-on/I-off ratio, showing promising for use in high -resolution, fully transparent, and:flexible display applications.