4.7 Article

Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

Journal

PHYSICAL REVIEW X
Volume 7, Issue 1, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevX.7.011030

Keywords

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Funding

  1. Swiss National Science Foundation through National Center of Competence in Research (NCCR) Quantum Science and Technology
  2. Eidgenossische Technische Hochschule Zurich

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The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matterlike quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work, we demonstrate strong coupling between the charge degree of freedom in a gate-defined GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices. In the resonant regime, we resolve the vacuum Rabi mode splitting of size 2g/2 pi = 238 MHz at a resonator linewidth kappa/2 pi = 12 MHz and a DQD charge qubit decoherence rate of gamma(2) = 2 pi = 40 MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit-based cavity QED for quantum information processing in semiconductor nanostructures.

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