4.2 Article

Tungsten disulfide thin film/p-type Si heterojunction photocathode for efficient photochemical hydrogen production

Journal

MRS COMMUNICATIONS
Volume 7, Issue 2, Pages 272-279

Publisher

CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrc.2017.37

Keywords

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Funding

  1. Samsung Research Funding Center of Samsung Electronics
  2. Global Ph. D Fellowship Program of the National Research Foundation of Korea - Ministry of Education

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We demonstrate the tungsten disulfide (WS2) thin film catalysts prepared by the sulfurization of vacuum deposited WO3 thin films for efficient hydrogen production with over 90% Faradaic efficiency. The 23-nm-thick WS2 thin film catalyst heterojunction with p-type silicon photocathode could exhibit a photocurrent density of 8.3 mA/cm(2) at 0 V versus a reversible hydrogen electrode (RHE), a low onset potential of 0.2 V versus RHE when photocurrent density reaches - 1 mA/cm(2) and long-term stability over 10 h.The enhanced catalytic activities of WS2/p-Si photocathodes compared with the bare p-Si photocathode originate from a number of edge sites in the synthesized polycrystalline thin films, which could act as hydrogen evolution catalyst.

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