Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4977838
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Funding
- R&D project for ICT Key Technology to Realize Future Society of MEXT
- ImPACT program of CSTI
- MEXT
- Government of Japan
- Grants-in-Aid for Scientific Research [15J04691] Funding Source: KAKEN
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We study spin-orbit torque induced magnetization switching in devices consisting of an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with sizes ranging from 5 mu m to 50 nm. As the size decreases, switching behavior changes from analogue-like to stepwise with several intermediate levels. The number of intermediate levels decreases with the decreasing size and finally evolves into a binary mode below a certain threshold. The results are found to be explained by a unique reversal process of this system, where ferromagnetic domains comprising a number of polycrystalline grains reverse individually and among the domains both out-of-plane and in-plane components of exchange bias vary. Published by AIP Publishing.
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