Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures

We study spin-orbit torque induced magnetization switching in devices consisting of an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with sizes ranging from 5 mu m to 50 nm. As the size decreases, switching behavior changes from analogue-like to stepwise with several intermediate levels. The number of intermediate levels decreases with the decreasing size and finally evolves into a binary mode below a certain threshold. The results are found to be explained by a unique reversal process of this system, where ferromagnetic domains comprising a number of polycrystalline grains reverse individually and among the domains both out-of-plane and in-plane components of exchange bias vary. Published by AIP Publishing.