Journal
NPJ 2D MATERIALS AND APPLICATIONS
Volume 1, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41699-017-0008-4
Keywords
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Funding
- National Science Foundation [DMR1508144]
- NSFC [61274123, 61474099, 61674127, 61431014]
- ZJU University, and the Fundamental Research Funds for the Central Universities [2016XZZX001-05]
- Cyrus Tang Center for Sensor Materials
- Open Research Fund of State Key Laboratory of Bioelectronics
- Southeast University
- Open Research Fund of State Key Laboratory of Nanodevices and Applications at Chinese Academy of Sciences [14ZS01]
- Churchill College at University of Cambridge
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We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 AW(-1)), fast time response ( 5 ns), high specific detectivity (1.6 x 10(13) Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 AW(-1) in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and dissipation-less remote sensor networks.
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