Journal
PHYSICAL REVIEW B
Volume 95, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.95.125203
Keywords
-
Funding
- MEXT of Japan [24740229, 16H03847, 24340078, 25103710]
- Materials and Structures Laboratory, Tokyo Institute of Technology
- Grants-in-Aid for Scientific Research [16H03847, 16K05440, 25103710, 24740229] Funding Source: KAKEN
Ask authors/readers for more resources
We performed x-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase transition in BiTeBr having a noncentrosymmetric layered structure (space group P3m1). The P3m1 structure remains stable up to pressures of 5 GPa; the ratio of lattice constants c/a has a minimum at pressures of 2.5-3 GPa. In the same range, the temperature dependence of resistivity changes frommetallic to semiconducting at 3 GPa and has a plateau region between 50 and 150 K in the semiconducting state. Meanwhile, the pressure variation of band structure shows that the bulk band-gap energy closes at 2.9 GPa and re-opens at higher pressures. Furthermore, according to the Wilson loop analysis, the topological nature of electronic states in noncentrosymmetric BiTeBr at 0 and 5 GPa are explicitly revealed to be trivial and nontrivial, respectively. These results strongly suggest that pressure-induced topological phase transition in BiTeBr occurs at the pressures of 2.9 GPa.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available