Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4978692
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Funding
- National Natural Science Foundation of China [51602056, 61274136, 51322201, U1632115]
- General Financial Grant from China Postdoctoral Science Foundation [2015M581523]
- Open Project of State Key Lab of Silicon Materials [SKL2014-7]
- Science and Technology Commission of Shanghai Municipality [14JC1400200]
- National Key Technologies R&D Program of China [2015ZX02102-003]
- Changjiang Young Scholars Programme of China
- Program of Shanghai Academic/Technology Research Leader [16XD1404200]
- International Postdoctoral Exchange Fellowship Program by the Office of China Postdoctoral Council
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Tubular germanium (Ge) resistors are demonstrated by rolling-up thin Ge nanomembranes (NMs, 50 nm in thickness) with electrical contacts. The strain distribution of rolled-up Ge microtubes along the radial direction is investigated and predicted by utilizing micro-Raman scattering spectroscopy with two different excitation lasers. Electrical properties are characterized for both unreleased GeNMs and released/rolled-up Ge microtubes. The conductivities of GeNMs significantly decrease after rolling-up into tubular structures, which can be attributed to surface charging states on the conductance, band bending, and piezo-resistance effect. When illuminated with a light source, facilitated by the suppressed dark current of rolled-up Ge tubes, the corresponding signal-to-noise ratio can be dramatically enhanced compared with that of planar GeNMs. Published by AIP Publishing.
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