Journal
ACTA MATERIALIA
Volume 126, Issue -, Pages 294-301Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2016.12.018
Keywords
Electrical resistivity; Multilayer thin films; Interface; Grain boundary; Temperature coefficient of resistivity
Funding
- Ministry of Science and Technology of China [2015GB121004]
- National Science Foundation of China (NSFC) [11375018, 11528508]
- NSFC [61377056, 11522543]
- Program for New Century Excellent Talents in University
- Recruitment Program of Global Youth Experts in China
- Instrumental Analysis Fund of Peking University
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The electrical resistivity of sputter-deposited Cu/V multilayer films with different individual layer thicknesses varying from 2.5 to 100 nm was evaluated in the temperature range of 150-300 K. The temperature coefficient of resistivity (TCR) of Cu/V multilayer was compared based on the semi-classical theory of Dimmich model. A new model has been proposed to describe the relationship between the resistivity and the individual layer thickness of metallic multilayer film by considering both interface scattering and grain boundary scattering based on Fuchs-Sondheimer method and Mayadas-Shatzkes method. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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