Journal
APPLIED PHYSICS EXPRESS
Volume 10, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.10.046601
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Funding
- Council for Science, Technology and Innovation (CSTI)
- Cross-ministerial Strategic Innovation Promotion Program (SIP)
- Next-generation power electronics (NEDO)
- Grants-in-Aid for Scientific Research [17H02781] Funding Source: KAKEN
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The effects of nitridation on the density of traps at SiO2/SiC interfaces near the conduction band edge were qualitatively examined using a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge as a result of nitridation, but the interface traps were not completely eliminated by nitridation. (C) 2017 The Japan Society of Applied Physics
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