Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 27, Issue 15, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201605593
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Funding
- Global Research Laboratory Program of the Ministry of Science, ICT, and Future Planning [NRF-2012K1A1A2040157]
- National Research Foundation of Korea (NRF) grant of the Republic of Korea [2013K1A4A3055679, 2015R1A5A7037615, 2016R1A2B1010327]
- National Research Foundation of Korea [2014R1A2A1A10052979, 2013K1A4A3055679, 2015R1A5A7037615, 2016R1A2B1010327, 2012K1A1A2040157] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A new type of wearable electronic device, called a textile memory, is reported. This is created by combining the unique properties of Al-coated threads with a native layer of Al2O3 as a resistance switching layer, and carbon fiber as the counter-electrode, which induces a fluent redox reaction at the interface under a small electrical bias (typically 2-3 V). These two materials can be embroidered into an existing cloth or woven into a novel cloth. The electrical resistance of the contacts is repeatedly switched by the bias polarity, as observed in the recently highlighted resistance switching memory. The devices with different structure from the solid metal-insulator-metal devices show reliable resistance switching behaviors in textile form by single stitch and in array as well that would render this new type of material system applicable to a broad range of emerging wearable devices. Such behavior cannot be achieved in other material choices, revealing the uniqueness of this material system.
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