Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 9, Issue 15, Pages 13571-13576Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.6b16424
Keywords
vanadium dioxide; insulator-metal transition; electric field; Mott transistor; hybrid dielectric
Funding
- Center for BioNano Health Guard, funded through Ministry of Science, ICT
- Future Planning (MSIP) of Korea as a Global Frontier Project [HGUARD_2013M3A6B2]
- National Research Foundation of Korea - Korean government [NRF2014R1A2A1A11052965]
- Korean Evaluation Institute of Industrial Technology (KEIT) - Ministry of Trade, Industry Energy (MOTIE) [10052980]
- National Research Foundation of Korea [2014R1A2A1A11052965] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We investigate the effect of electric field on VO2 back-gated field effect transistor (FET) devices. Using hybrid dielectric layers, we demonstrate the highest resistance modulation on the order of 102 in VO2 at a positive gate bias of 80 V (1.6 MV/cm). VO2 FET devices are prepared on SiO2 substrates of different thicknesses (100-300 nm) and hybrid dielectric layers of Al2O3/SiO2 (500 nm). For thicknesses less than 300 nm, no electric-field effects are observed, whereas for a 300 nm thickness, a small decrease in resistance is observed under a 0.2 MV/cm electric field. Under the electrostatic effect, the carrier concentration increases in VO2 devices, decreasing the resistance and the transition temperature from 66.75 to 64 degrees C. The leakage analysis shows that the interface quality of VO2 films on hybrid dielectric layers can be further improved. These studies suggest a multilevel fast resistance switching with the electric field and give an insight into the gate-source leakage current, which limits the phase transition in VO2 in an electric field.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available