Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 50, Issue 16, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aa61d9
Keywords
Schottky junctions; spatial inhomogeneities; graphene/MoS2
Categories
Funding
- National Science Foundation [DMR-1508560]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1734017] Funding Source: National Science Foundation
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Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96 +/- 0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.
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