Journal
APPLIED PHYSICS LETTERS
Volume 110, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4982876
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Funding
- European Research Council (ERC) under the European Union's Horizon research and innovation programme (Project Q-CEOM) [638765]
- European Union Seventh Framework Programme (Project iQUOEMS) [323924]
- Danish Council for Independent research [4002-00060]
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We realise a circular gray-field polariscope to image stress-induced birefringence in thin (submicron thick) silicon nitride membranes and strings. This enables quantitative mapping of the orientation of principal stresses and stress anisotropy, complementary to, and in agreement with, finite element modeling. Furthermore, using a sample with a well-known stress anisotropy, we extract a value for the photoelastic (Brewster) coefficient of silicon nitride, C approximate to (3.4 +/- 0.1) x 10(-6) MPa-1. We explore possible applications of the method to analyse and quality-control stressed membranes with phononic crystal patterns.
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